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| Silicon Crossover Ring Quad Schottky Diode q BAT 14-099R Medium barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) Q62702-A0042 Pin Configuration Package1) SOT-143 BAT 14-099R S8 Maximum Ratings per Diode Parameter Forward current Power dissipation, TS 70 C Storage temperature range Operating temperature range Thermal Resistance per Diode Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol IF Ptot Tstg Top Values 90 100 - 55 ... + 150 Unit mA mW - 55 ... + 150 C 1020 780 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm to 0.7 mm. Semiconductor Group 1 02.96 BAT 14-099R Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching1) IF = 10 mA Diode capacitance VR = 0, f= 1 MHz Forward resistance IF = 10 mA / 50 mA Symbol min. VF - - VF Values typ. 0.4 0.48 - 0.38 5.5 max. Unit V - - 20 - - mV pF - - - CT RF Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina 1) VF is the difference between the lowest and the highest VF in the component. Semiconductor Group 2 |
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